A Schottky diode is the most significant component for. 1. Construction of Schottky Diode. The Schottky diode is small different from PN junction diode. Schottky diode is also known as schottky barrier diode, surface barrier diode, majority carrier device, hot-electron diode, or hot carrier diode. Internal Structure of Schottky Barrier Diode2. Compare to schottky diode it has more forward voltage drop. It is an electronic component consisting of a thin wire that lightly toches a crystal of semiconducting mineral to make a crude point–contact rectifier. The Schottky diode employs the metal-semiconductor junction instead of the PN junction which is employed in normal PN diodes. The construction differs from that of the standard PN-junction diode in that it uses a metal-semiconductor (M-S) junction known as the Schottky barrier. The contact pads are … No stored charge due to the absence of holes in the metal. Save my name, email, and website in this browser for the next time I comment. At the same time during construction, the whole assembly is metallised in order to generate anode and cathode connection. For protection purpose metal layer is surrounded by gold or silver layer. It is made of a metal and semiconductor forming unilateral junction. The intrinsic semiconductor separated by two heavily doped p and n type semiconductor material. Schottky Diode: P-N Junction Diode: Junction is formed between N type semiconductor to Metal plate. The metal side acts as the anode and N type semiconductor acts as cathode. Current is the dependent variable while voltage is the independent variable in the Schottky diode. Its construction and circuit symbol are described in the below diagram. Silicon is used for low frequency operation. The construction of this diode is simple: it is constructed by joining the four layers to form PNPN junction. Construction of Schottky Diode The constructional structure of a Schottky diode shows variation from that of the normal pn junction diode. A Schottky barrier diode is also known as Schottky or hot carrier diode. Schottky Diode Construction. Majority of the junctions comprise of either platinum, chromium, molybdenum or tungsten metal as the anode and an N-type silicon semiconductor material as the cathode. This diode is created by the combination of metallic material and semiconductor. Usually, Gallium is used as a semiconductor for the schottky diode. Typical metals used are molybdenum, platinum, chromium or tungsten, and certain silicides (e.g., palladium silicide and platinum silicide), whereas the semiconductor would typically be n-type silicon. Construction of Schottky Barrier Diode In this diode, connection created between metal and semiconductor to form Schottky barrier i.e. The metal such as gold, silver, molybdenum, tungsten or platinum is used. Construction of Schottky Diode. Thus, is used in the construction of zener diode. The schottky diode is named after German physicist Walter H. Schottky. This PN junction forms a depletion layer in between the P and N material. Schottky barrier diode circuit symbol Basic Schottky diode characteristics. Schottky diode is invented by Walter H. Schottky. Although germanium diodes using the cats whisker or point contact principle illustrated in Fig. The selection of the combination of the metal and semiconductor decides the forward voltage of the diode. Privacy. Construction of a Schottky Diode. The Schottky diode is small different from PN junction diode. In the construction of this diode gold, platinum, tungsten and some silicides are used with the semiconductor material that is N doped. The equivalent circuit of this diode using two transistors is shown in above figure where in the collector of a transistor T1 is connected to the base of T2. 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